High linearity CMOS variable gain amplifier for UWB applications
I. L. Abdalla,
Y. A. Khalaf,
F. A. Farag
Issue:
Volume 1, Issue 1, December 2012
Pages:
1-8
Published:
30 December 2012
Abstract: A large dynamic-range Programmable Variable Gain Amplifier (PVGA) suitable for Ultra Wide Band (UWB) applications is presented. The PVGA is composed of three programmable variable gain amplifier stages followed by an output buffer. Such wide bandwidth allows our proposed PVGA to be used in multi-standard protocols. Power reduction is developed for the variable gain amplifier stages. Thorough analyses of the mid-band gain and noise are presented; and design tradeoffs are carefully handled. The PVGA circuit is designed and simulated in 0.13 µm IBM-CMOS process; the overall PVGA with buffer consumes 25 mA from a 1.5 V supply. The PVGA achieves 54.5 dB dynamic-range (DR), 17.6 dBm IIP3, -42.31 dB THD at peak-to-peak differential output voltage of 1 V, and frequency 400 MHz Moreover; the pro-posed circuit reports a good noise performance; the average integrated noise is 121.6 nV/Hz at minimum gain of -0.5 dB.
Abstract: A large dynamic-range Programmable Variable Gain Amplifier (PVGA) suitable for Ultra Wide Band (UWB) applications is presented. The PVGA is composed of three programmable variable gain amplifier stages followed by an output buffer. Such wide bandwidth allows our proposed PVGA to be used in multi-standard protocols. Power reduction is developed for ...
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Design of Analog Field Programmable CMOS Current Conveyor
G. Kapur,
S. Mittal,
C. M. Markan,
V. P. Pyara
Issue:
Volume 1, Issue 1, December 2012
Pages:
9-21
Published:
30 December 2012
Abstract: The paper propose a modified high frequency current controlled current conveyor CMOS circuit CCCII where current gain, current controlling intrinsic impedance and circuit offsets are programmable independently to desired values within a specific field range after fabrication with the help of field programmable floating gate transistors FGMOS. The programmable charge at floating-gate of FGMOS using external voltages results in its threshold voltage variation, which in turn program the design (CCCII) specifications. The circuit occupies low power, about 1.509mW total power dissipation and shows higher temperature stability (0.0287uA/°C variation in output current with temperature change). With specific sizing and biasing condition, the current gain can be programmed from 0.2 to 2.1, intrinsic impedance from 15K to 51K, while offset current can be compensated, independently using each FGMOSFETs, respectively, with 13-bit precision. However the final programmable CCCII circuit with FGMOSFETs occupies 65µm × 54µm chip area. The circuit finds application in systems where field-programmability of the design using smaller sized hardware is required like universal filter, current control high frequency oscillator, etc as compared to the circuits using current control conveyor based FPAAs.
Abstract: The paper propose a modified high frequency current controlled current conveyor CMOS circuit CCCII where current gain, current controlling intrinsic impedance and circuit offsets are programmable independently to desired values within a specific field range after fabrication with the help of field programmable floating gate transistors FGMOS. The p...
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