Volume 3, Issue 1, February 2014, Page: 1-4
Corner Effect in Multiplier SOI-Fin FETs
A.N. Moulai Khatir, Research Unit of Materials and Renewable Energies URMER, Abou Bekr Belkaid University, Tlemcen 13000.BP 119, Algeria
A. Guen-Bouazza, Research Unit of Materials and Renewable Energies URMER, Abou Bekr Belkaid University, Tlemcen 13000.BP 119, Algeria
B. Bouazza, Research Unit of Materials and Renewable Energies URMER, Abou Bekr Belkaid University, Tlemcen 13000.BP 119, Algeria
Received: Dec. 8, 2013;       Published: Feb. 20, 2014
DOI: 10.11648/j.cssp.20140301.11      View  3298      Downloads  169
Abstract
SOI-Multi-FinFET was analyzed by a three-dimensional numerical device simulator and its electrical characteristics and potential distribution in the oxide and the silicon in the section perpendicular to the flow of the current were compared for single-fin, three-fin and five-fin FET to investigate the influence of fins number on corner effect in Dual-gate SOI Multi-FinFET, and we provide a comparison with a Tri-gate SOI Multi-FinFET structure.
Keywords
SOI, Fin FET, Corner Effect, Dual-Gate, Tri-Gate, Multi-Fin FET
To cite this article
A.N. Moulai Khatir, A. Guen-Bouazza, B. Bouazza, Corner Effect in Multiplier SOI-Fin FETs, Science Journal of Circuits, Systems and Signal Processing. Vol. 3, No. 1, 2014, pp. 1-4. doi: 10.11648/j.cssp.20140301.11
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